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TK56E12N1 - N-Channel MOSFET

Datasheet Summary

Features

  • Low drain-source on-resistance: RDS(ON) = 7.5mΩ (VGS = 10 V).
  • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number TK56E12N1
Manufacturer INCHANGE
File Size 278.70 KB
Description N-Channel MOSFET
Datasheet download datasheet TK56E12N1 Datasheet
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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor TK56E12N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 7.5mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 120 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 56 A IDM Drain Current-Single Pulsed 210 A PD Total Dissipation @TC=25℃ 168 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.74 ℃/W isc website：www.
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