Datasheet4U Logo Datasheet4U.com

TK56E12N1 - Silicon N-Channel MOSFET

Datasheet Summary

Features

  • (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 5.8 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pul.

📥 Download Datasheet

Datasheet preview – TK56E12N1

Datasheet Details

Part number TK56E12N1
Manufacturer Toshiba Semiconductor
File Size 255.80 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK56E12N1 Datasheet
Additional preview pages of the TK56E12N1 datasheet.

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
TK56E12N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK56E12N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 5.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4.
Published: |