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TK58E06N1 - N-Channel MOSFET

Features

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  • Low drain-source on-resistance: RDS(on) ≤5.4mΩ. (VGS = 10 V).
  • Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK58E06N1，ITK58E06N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤5.4mΩ. (VGS = 10 V) ·Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 58 IDM Drain Current-Single Pulsed 268 PD Total Dissipation @TC=25℃ 110 Tj Max.
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