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TK58E06N1 - Silicon N-Channel MOSFET

Features

  • (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-puls.

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Datasheet Details

Part number TK58E06N1
Manufacturer Toshiba
File Size 244.74 KB
Description Silicon N-Channel MOSFET
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Full PDF Text Transcription

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TK58E06N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK58E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4.
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