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TK8P25DA - N-Channel MOSFET

Datasheet Summary

Features

  • Low drain-source on-resistance: RDS(ON) = 0.5Ω (MAX).
  • Enhancement mode: Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – TK8P25DA

Datasheet Details

Part number TK8P25DA
Manufacturer INCHANGE
File Size 277.80 KB
Description N-Channel MOSFET
Datasheet download datasheet TK8P25DA Datasheet
Additional preview pages of the TK8P25DA datasheet.

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Full PDF Text Transcription

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iscN-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.5Ω (MAX) ·Enhancement mode: Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 7.5 A IDM Drain Current-Single Pulsed 30 A PD Total Dissipation @TC=25℃ 55 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 2.27 UNIT ℃/W TK8P25DA isc website：www.iscsemi.
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