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TK8P25DA - Silicon N-Channel MOSFET

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Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ. ) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK8P25DA DPAK 1: Gate 2: Drain (Heatsink) 3: Source ©2015 Toshiba Corporation 1 Start of commercial production 2011-03 2015-08-03 Rev.4.0 TK8P25DA 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source vo.

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Datasheet Details

Part number TK8P25DA
Manufacturer Toshiba Semiconductor
File Size 268.42 KB
Description Silicon N-Channel MOSFET
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MOSFETs Silicon N-Channel MOS (π-MOS) TK8P25DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK8P25DA DPAK 1: Gate 2: Drain (Heatsink) 3: Source ©2015 Toshiba Corporation 1 Start of commercial production 2011-03 2015-08-03 Rev.4.0 TK8P25DA 4.
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