Inchange Semiconductor TYN612TRG
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | TYN612TRG |
|---|---|
| Datasheet | TYN612TRG Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Thyristor |
| Buy | Stock & Price |
DESCRIPTION
●With TO-220 packaging●High heat dissipation and durability
●Thermowatt construction for low thermal
●Glass passivated junctions and center gate fire for greater parameter uniformity and stability
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) ITSM PG(AV) RMS on-state current Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tc=25℃ ) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature Tc=105℃ 50Hz 60Hz MIN 600 600 12 145 140 1.0 -40~125 -40~150 UNIT V V A A W ℃ ℃ELECTRICAL CHARACTERISTICS
(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ VTM On-state voltage ITM= 24A IGT Gate-trigger current VD = 12...