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TYN612TRG Datasheet Thyristor

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors TYN612TRG.

General Description

·With TO-220 packaging ·High heat dissipation and durability ·Thermowatt construction for low thermal ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) ITSM PG(AV) RMS on-state current Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tc=25℃ ) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature Tc=105℃ 50Hz 60Hz MIN 600 600 12 145 140 1.0 -40~125 -40~150 UNIT V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ VTM On-state voltage ITM= 24A IGT Gate-trigger current VD = 12 V;

RL=33Ω VGT Gate-trigger voltage VD = 12 V;

RL=33Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.005 2.0 mA 1.6 V 0.5 5 mA 1.3 V 1.3 ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors TYN612TRG NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.

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