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256Mb (x16) - DDR Synchronous DRAM
16M x16 bit DDR Synchonous DRAM
Overview
The 256Mb DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 256 Mbits. It is internally configured as a quad 4M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK#. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. The device provides programmable Read or Write burst lengths of 2, 4, or 8.