International Rectifier AUIRF3205Z
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.| Part No. | AUIRF3205Z |
|---|---|
| Datasheet | AUIRF3205Z Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
FEATURES
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● AUIRF3205Z AUIRF3205ZS HEXFET® Power MOSFET D
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● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS RDS(on) max. ID (Silicon Limited) 55V 6.5mΩ 110A 75A G S ID (Package Limited) D
DESCRIPTION
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D G D S G D S TO-220AB AUIRF3205Z D2Pak AUIRF3205ZSABSOLUTE MAXIMUM RATINGS
G Gate D Drain S Source Stresses beyond those listed under “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device.
