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AUIRF3205Z - Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   VDSS HEXFET® Power MOSFET 55V RDS(on) max. 6.5m ID (Silicon Limited) 110A ID (Package Limited) 75A D.

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Datasheet Details

Part number AUIRF3205Z
Manufacturer Infineon
File Size 691.12 KB
Description Power MOSFET
Datasheet download datasheet AUIRF3205Z Datasheet
Additional preview pages of the AUIRF3205Z datasheet.

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Full PDF Text Transcription

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  AUIRF3205Z AUTOMOTIVE GRADE AUIRF3205ZS Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   VDSS HEXFET® Power MOSFET 55V RDS(on) max. 6.5m ID (Silicon Limited) 110A ID (Package Limited) 75A D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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