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AUIRF3205ZS - HEXFET Power MOSFET

This page provides the datasheet information for the AUIRF3205ZS, a member of the AUIRF3205Z HEXFET Power MOSFET family.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Features

  • AUIRF3205Z AUIRF3205ZS HEXFET® Power MOSFET D.
  • Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS RDS(on) max. ID (Silicon Limited) 55V 6.5mΩ 110A 75A G S ID (Package Limited) D.

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www.DataSheet4U.com PD - 97542 AUTOMOTIVE GRADE Features ● ● ● ● ● AUIRF3205Z AUIRF3205ZS HEXFET® Power MOSFET D ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS RDS(on) max. ID (Silicon Limited) 55V 6.5mΩ 110A 75A G S ID (Package Limited) D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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