Download the AUIRF3205ZS datasheet PDF.
This datasheet also covers the AUIRF3205Z variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
Key Features
AUIRF3205Z AUIRF3205ZS
HEXFET® Power MOSFET
D.
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
V(BR)DSS RDS(on) max. ID (Silicon Limited)
55V 6.5mΩ 110A 75A
G S
ID (Package Limited)
D.
Note: The manufacturer provides a single datasheet file (AUIRF3205Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AUIRF3205ZS (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AUIRF3205ZS. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PD - 97542 AUTOMOTIVE GRADE Features ● ● ● ● ● AUIRF3205Z AUIRF3205ZS HEXFET® Power MOSFET D ● ● Advanced Process Technology Ultra Low On-Resistance 1...
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wer MOSFET D ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS RDS(on) max. ID (Silicon Limited) 55V 6.5mΩ 110A 75A G S ID (Package Limited) D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
AUIRF3205ZS Datasheet
