Download the AUIRF3205ZS datasheet PDF.
This datasheet also covers the AUIRF3205Z variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
Advanced Process Technology.
Ultra Low On-Resistance.
175°C Operating Temperature.
Fast Switching.
Repetitive Avalanche Allowed up to Tjmax.
Lead-Free, RoHS Compliant.
Automotive Qualified.
VDSS
HEXFET® Power MOSFET 55V
RDS(on) max. 6.5m
ID (Silicon Limited)
110A
ID (Package Limited)
75A
D.
Full PDF Text Transcription for AUIRF3205ZS (Reference)
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AUIRF3205ZS. For precise diagrams, and layout, please refer to the original PDF.
AUIRF3205Z AUTOMOTIVE GRADE AUIRF3205ZS Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Aval...
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tance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS HEXFET® Power MOSFET 55V RDS(on) max. 6.5m ID (Silicon Limited) 110A ID (Package Limited) 75A D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
AUIRF3205ZS Datasheet
