AUIRFR024N Datasheet PDF | International Rectifier

International Rectifier AUIRFR024N

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

Part No.	AUIRFR024N
Datasheet	AUIRFR024N Download
Manufacturer	International Rectifier
Description	Power MOSFET
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FEATURES

l l l l l l l l l AUIRFR024N AUIRFU024N HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS 55V 0.075Ω 17A G S RDS(on) max. ID D g D

DESCRIPTION

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. G D S G D S D-Pak AUIRFR024N I-Pak AUIRFU024N G D S Gate Drain Source

ABSOLUTE MAXIMUM RATINGS

Stresses beyond those listed under “

ABSOLUTE MAXIMUM RATINGS

” may cause permanent damage to the device. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TST...

AUIRFR024N Datasheets by Manufacturer

1 datasheets

Part Number	Manufacturer
AUIRFR024N	Infineon Technologies