Infineon Technologies AUIRFR024N
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.| Part No. | AUIRFR024N |
|---|---|
| Datasheet | AUIRFR024N Download |
| Manufacturer |  Infineon Technologies |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Advanced Planar Technology● Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
DESCRIPTION
Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. VDSS RDS(on) ID AUIRFR024N max. 55V 0.075 17A D G Gate S G D-Pak AUIRFR024N D Drain S Source Base part number AUIRFR024N Package Type D-Pak Standard Pack Form Quantity Tube 75 Tape and Reel Left 3000 Orderable Part Number AUIRFR024N AUIRFR024NTRLABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
