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AUIRFR024N Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: AUTOMOTIVE GRADE PD - 96355.

General Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.

This benefit bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

G D S G D S D-Pak AUIRFR024N I-Pak AUIRFU024N G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

Key Features

  • l l l l l l l l l AUIRFR024N AUIRFU024N HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS 55V 0.075Ω 17A G S RDS(on) max. ID D g D.

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