Datasheet4U Logo Datasheet4U.com

AUIRFR024N - Power MOSFET

General Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.

Key Features

  • l l l l l l l l l AUIRFR024N AUIRFU024N HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS 55V 0.075Ω 17A G S RDS(on) max. ID D g D.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFR024N Power MOSFET Infineon
AUIRFR120Z Power MOSFET Infineon
AUIRFR2607Z Power MOSFET Infineon
AUIRFR2905Z Power MOSFET Infineon
AUIRFR3504 Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRFR1010Z Power MOSFET
AUIRFR1018E Power MOSFET
AUIRFR120Z Power MOSFET
AUIRFR2307Z HEXFET Power MOSFET
AUIRFR2405 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE PD - 96355 Features l l l l l l l l l AUIRFR024N AUIRFU024N HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS 55V 0.075Ω 17A G S RDS(on) max. ID D g D Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.