FEATURES
l l l l l l l AUIRFS3607 AUIRFSL3607 HEXFET® Power MOSFET D Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S VDSS RDS(on) typ. max. ID D D 75V 7.34m 9.0m 80A : : DESCRIPTION
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S G G D S D2Pak AUIRFS3607 TO-262 AUIRFSL3607 G D S Gate ABSOLUTE MAXIMUM RATINGS
Drain Source Stresses beyond those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. Th...
International Rectifier
