Infineon Technologies AUIRFS3607
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.| Part No. | AUIRFS3607 |
|---|---|
| Datasheet | AUIRFS3607 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Advanced Process Technology● Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
DESCRIPTION
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID 75V 7.34m 9.0m 80A D D S G D2Pak AUIRFS3607 G Gate S GD TO-262 AUIRFSL3607 D Drain S Source Base part number AUIRFSL3607 AUIRFS3607 Package Type TO-262 D2-Pak Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 Orderable Part Number AUIRFSL3...
