AUIRLL2705 Datasheet PDF | International Rectifier

International Rectifier AUIRLL2705

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.

Part No.	AUIRLL2705
Datasheet	AUIRLL2705 Download
Manufacturer	International Rectifier
Description	Power MOSFET
Buy	Stock & Price

FEATURES

l Advanced Planar Technology l Low On-Resistance l Logic Level Gate Drive l Dynamic dv/dt Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* G

DESCRIPTION

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. HEXFET® Power MOSFET D V(BR)DSS 55V RDS(on) max. 0.04Ω S ID 3.8A G Gate D S D G SOT-223 AUIRLL2705 D Drain S Source Base Part Number AUIRLL2705 Package Type SOT-223 Standard Pack Form Quantity Tube 95 Tape and Reel 2500 Orderable Part Number AUIRLL2705 AUIRLL2705TR

ABSOLUTE MAXIMUM RATINGS

Stresses beyond those listed under “

ABSOLUTE MAXIMUM RATINGS

” may cause permanent damage to the device. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

AUIRLL2705 Datasheets by Manufacturer

1 datasheets

Part Number	Manufacturer
AUIRLL2705	Infineon Technologies