International Rectifier AUIRLR2905
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.AUIRLR2905 Specifications
- Package : DPAK
- Mount Type : Surface Mount
- Breakdown Voltage : 55V
- Threshold Voltage : 1V
- RDS(on) Max : 27mΩ
- Drain-Source Resistance : 30mΩ
- Input Capacitance : 1.7nF
- Terminals : 2
- Channels : 1
- Rise Time : 84ns
- Fall Time : 15ns
- Max Power Dissipation : 110W
- Max Operating Temp : 175°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | AUIRLR2905 |
|---|---|
| Datasheet | AUIRLR2905 Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. HEXFET® Power MOSFET D V(BR)DSS 55V RDS(on) max. 27m S ID 42A D S G D-Pak AUIRLRU2905 S D I-Pak G AUIRLU2905 G Gate D Drain S Source Base part number Package Type Standard Pack Complete Part Number AUIRLR2905 AUIRLU2905 Dpak Ipak Form Tube Tape and Reel Tape and Reel Left Tape and Reel Right Tube Quantity 75 2000 3000 3000 75 AUIRLR2905 AUIRLR2905TR AUIRLR2905TRL AUIRLR2905TRR AUIRLU2905ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter Max.
