AUIRLR2905 Datasheet PDF - Infineon Power MOSFET Specs

AUIRLR2905 - Power MOSFET

Datasheet Summary

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

Advanced Planar Technology.
Logic Level Gate Drive.
Low On-Resistance.
Dynamic dV/dT Rating.
175°C Operating Temperature.
Fast Switching.
Fully Avalanche Rated.
Repetitive Avalanche Allowed up to Tjmax.
Lead-Free, RoHS Compliant.
Automotive Qualified.
VDSS RDS(on) ID D HEXFET® Power MOSFET 55V max. 27m 42A D.

Datasheet Details

Part number	AUIRLR2905
Manufacturer	Infineon
File Size	461.75 KB
Description	Power MOSFET
Datasheet	AUIRLR2905 Datasheet
Additional preview pages of the AUIRLR2905 datasheet.

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Full PDF Text Transcription

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AUTOMOTIVE GRADE AUIRLR2905 AUIRLU2905 Features  Advanced Planar Technology  Logic Level Gate Drive  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * VDSS RDS(on) ID D HEXFET® Power MOSFET 55V max. 27m 42A D Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Published: Dec 8, 2016 |