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AUIRLR2905 - Power MOSFET

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • Advanced Planar Technology.
  • Logic Level Gate Drive.
  • Low On-Resistance.
  • Dynamic dV/dT Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   VDSS RDS(on) ID D HEXFET® Power MOSFET 55V max. 27m 42A D.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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  AUTOMOTIVE GRADE AUIRLR2905 AUIRLU2905 Features  Advanced Planar Technology  Logic Level Gate Drive  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   VDSS RDS(on) ID D HEXFET® Power MOSFET 55V max. 27m 42A D Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.