AUIRLR2905Z Datasheet | International Rectifier

- 97583 AUTOMOTIVE GRADE Features - - - - - - - - HEXFET® Power MOSFET Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, Ro HS pliant Automotive Qualified - V(BR)DSS RDS(on) max. ID (Silicon Limited) 55V 13.5mΩ 60A 42A ID (Package Limited) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D-Pak AUIRLR2905Z Gate Drain Source...