International Rectifier AUIRLR2905Z
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.FEATURES
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● AUIRLR2905Z HEXFET® Power MOSFET D Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS RDS(on) max. ID (Silicon Limited) 55V 13.5mΩ 60A 42A G S ID (Package Limited)
DESCRIPTION
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D S D-Pak AUIRLR2905Z G D S G Gate Drain SourceABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device.