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AUIRLR2905Z Datasheet PDF

International Rectifier AUIRLR2905Z

The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Part No. AUIRLR2905Z
Datasheet AUIRLR2905Z Download
Manufacturer
International Rectifier
Description Power MOSFET
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AUIRLR2905Z datasheet page 1 preview

FEATURES

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● AUIRLR2905Z HEXFET® Power MOSFET D Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS RDS(on) max. ID (Silicon Limited) 55V 13.5mΩ 60A 42A G S ID (Package Limited)

DESCRIPTION

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D S D-Pak AUIRLR2905Z G D S G Gate Drain Source

ABSOLUTE MAXIMUM RATINGS

Stresses beyond those listed under “

ABSOLUTE MAXIMUM RATINGS

” may cause permanent damage to the device.
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