International Rectifier G4BC20U
IRG4BC20U
FEATURES
● UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode● Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
● Industry standard TO-220AB package C G E n-channel Benefits
● Generation 4 IGBTs offer highest efficiency available
● IGBTs optimized for specified application conditions
● Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs VCES = 600V VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A
ABSOLUTE MAXIMUM RATINGS
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.