International Rectifier G4BC20UD
INSULATED GATE BIPOLAR TRANSISTOR
| Part No. | G4BC20UD |
|---|---|
| Datasheet | G4BC20UD Download |
| Manufacturer |  International Rectifier |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode● Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
● IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
● Industry standard TO-220AB package C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A n-cha nn el Benefits
● Generation -4 IGBTs offer highest efficiencies available
● IGBTs optimized for specific application conditions
● HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing
● Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB
ABSOLUTE MAXIMUM RATINGS
Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Co...
