FEATURES
IRF1010ZLPbF l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free DESCRIPTION
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . ABSOLUTE MAXIMUM RATINGS
HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 7.5mΩ S ID = 75A TO-220AB D2Pak TO-262 IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Max. 94 66 75 360 140 Units A W Linear Derating Factor VGS Gate-to-Source Voltage dEAS (Thermally limited) Single Pulse Avalanche Energy hEAS (Tested ) Single Pulse Avalanche Energy Tested Value ÃIAR Avalanche Current gEAR Repetitive Avalanche Energy 0.90 ±...
International Rectifier
