International Rectifier IRF1404Z
Power MOSFET
| Part No. | IRF1404Z |
|---|---|
| Datasheet | IRF1404Z Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 3.7mΩ This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.DESCRIPTION
S ID = 75AABSOLUTE MAXIMUM RATINGS
Parameter TO-220AB IRF1404Z D2Pak IRF1404ZS Max. 190 130 75 750 220 TO-262 IRF1404ZL Units A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM PD @TC = 25°C Power Dissipation Linear D...
