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IRF150 Datasheet PDF

International Rectifier IRF150

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
Part No. IRF150
Datasheet IRF150 Download
Manufacturer
International Rectifier
Description N-Channel Power MOSFET
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IRF150 datasheet page 1 preview

FEATURES

: n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 38 24 152 150 1.2 ±20 150 38 15 5.5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) 11.5 (typical) Units A W W/°C V mJ A mJ V/ns o C g 1 08/21/01 IRF150

ELECTRICAL CHARACTERISTICS

@ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source...
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