Nell Power Semiconductor IRF150
IRF150 is a three-terminal silicon device with current conduction capability of 42A, fast switching speed, low on-state resistance, breakdown voltage rating of 100V, and max. They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS and general purpose switching applications.
| Part No. |
IRF150 |
| Datasheet |
IRF150
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| Manufacturer |
 Nell Power Semiconductor |
| Description |
N-Channel Power MOSFET |
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DESCRIPTION
The Nell threshold voltage of 4 volts. D G D S TO-3PB (IRF150B) GD S TO-247AB (IRF150C) FEATURES
RDS(ON) = 0.055Ω @ VGS = 10V Ultra low gate charge(110nC Max.) Low reverse transfer capacitance (CRSS = 230pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature D (Drain) G (Gate) S (Source) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 42 100 0.055 @ VGS = 10V 110 ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS Drain to Source voltage TJ=25°C to 150°C VDGR Drain to Gate voltage RGS=20KΩ VGS Gate to Source voltage ID Continuous Drain Current (VGS=10V) TC=25°C TC=100°C IDM Pulsed Drain current(Note 1) IAR Avalanche current(Note 1) EAR Repetitive avalanche energy(Note 1) lAR=22A, RGS=50Ω, VGS=10V EAS Single pulse avalanche energy(Note 2) lAS=22A, L=1.7mH dv/dt Peak diode recovery dv/dt(Note 3) VALUE 100 100 ±20 42 30 160 22 16 420 5.0 UNIT V A mJ V...
