International Rectifier IRF1503
This value determined from sample failure population.| Part No. | IRF1503 |
|---|---|
| Datasheet | IRF1503 Download |
| Manufacturer |  International Rectifier |
| Description | AUTOMOTIVE MOSFET |
| Buy | Stock & Price |
APPLICATIONS
●● IRF1503 D HEXFET® Power MOSFET VDSS = 30V G S 14V Automotive Electrical Systems 14V Electronic Power Steering Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
FEATURES
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● RDS(on) = 3.3mΩ ID = 75A
DESCRIPTION
Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220ABABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Sil...
