International Rectifier IRF240
The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters.| Part No. | IRF240 |
|---|---|
| Datasheet | IRF240 Download |
| Manufacturer |  International Rectifier |
| Description | N-Channel Transistor |
| Buy | Stock & Price |
DESCRIPTION
HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. TO-3 (TO-204AE)FEATURES
● Repetitive Avalanche Ratings● Dynamic dv/dt Rating
● Hermetically Sealed
● Simple Drive Requirements
● ESD Rating: Class 2 per MIL-STD-750, Method 1020
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Lead Temperature Weight Value 18 11 72 125 1.0 ± 20 450 18 12.5 5.0 -55 to + 150 300 (0.063 in. (1.6mm) from case for 10s) 11.5 (Typical) Units A W W/°C V mJ A mJ V/ns °C g For footnotes refer to the page 2.
