Seme LAB IRF240
N-Channel Power MOSFET
MECHANICAL DATA
Dimensions in mm (inches) 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–RELAPPLICATIONS
VDSS ID(cont) RDS(on) 200V 18A 0.18W 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.177) 12.19 (0.48) 11.18 (0.44) 1.63 (0.064) 1.52 (0.060) 2 11.18 (0.440) 10.67 (0.420) 4.09 (0.161) 3.84 (0.151) 2 Pls 1FEATURES
● HERMETICALLY SEALED TO3 METAL PACKAGE 16.97 (0.668) 16.87 (0.664)● SIMPLE DRIVE REQUIREMENTS
● SCREENING OPTIONS AVAILABLE TO3 METAL PACKAGE Pin 1 = Source Pin 2 Gate
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RqJC RqJA Gate – Source Voltage Continuous Drain Current @ Tcase = 25°C Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient ±20V 18A 11A 72A 125W 1.0W/°C –55 to 150°C 1.0°C/W max.