International Rectifier IRF3709ZS
HEXFET Power MOSFET
| Part No. | IRF3709ZS |
|---|---|
| Datasheet | IRF3709ZS Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 95835 IRF3709Z IRF3709ZS IRF3709ZL HEXFET® Power MOSFET VDSS RDS(on) max Qg 30V 6.3m: 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current TO-220AB IRF3709Z D2Pak IRF3709ZS TO-262 IRF3709ZLABSOLUTE MAXIMUM RATINGS
Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter iRθJC Junction-to-Case gRθJA Junction-to-Ambient (PCB Mount) Max. 30 ± 20 87h 62h 350 79 40 0.53 -55 to + 175 300 (1.6mm from case) y y10 lbf in (1.1N m) Typ. ––– ––– Max. 1.89 40...
