IRF3709ZS Description
·Static drain-source on-resistance: RDS(on) ≤6.3mΩ@VGS= 10V ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS.
IRF3709ZS is N-Channel MOSFET manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
International Rectifier |
IRF3709ZS | HEXFET Power MOSFET |
International Rectifier |
IRF3709ZSLPBF | (IRF3709xPbF) HEXFET Power MOSFET |
International Rectifier |
IRF3709ZSPbF | HEXFET Power MOSFET |
International Rectifier |
IRF3709Z | HEXFET Power MOSFET |
International Rectifier |
IRF3709ZCL | HEXFET Power MOSFET |
·Static drain-source on-resistance: RDS(on) ≤6.3mΩ@VGS= 10V ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS.