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isc N-Channel MOSFET Transistor
·DESCRIPTION ·Drain Current :ID= 90A@ TC=25℃ ·Drain Source Voltage
: VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·High Frequency Synchronous Buck Converters for Computer Processor Power.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
30
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous
90
A
ID(puls)
Pulse Drain Current
360
A
Ptot
Total Dissipation
120
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.04 ℃/W
IRF3709S
.
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