VBsemi Electronics IRF3709ZCS
N-Channel MOSFET
| Part No. | IRF3709ZCS |
|---|---|
| Datasheet | IRF3709ZCS Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFET● 100 % Rg and UIS Tested
● Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
● OR-ing● Server
● DC/DC
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC = 25 °C 98a, e Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID 98e 28.8b, c A TA = 70 °C 27b, c Pulsed Drain Current IDM 300 Avalanche Current Pulse Single Pulse Avalanche Energy IAS 36 L = 0.1 mH EAS 64.8 V Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 90a, e 3.13b, c A TC = 25 °C 250a Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 175 3.75b, c W TA = 70 °C 2.63b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Maximum Junction-to-Ambientb, d Maximum Junction-to-Case t 10 sec RthJA 32 Steady State RthJC 0.5 Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 sec. d.
