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IRF3703PBF - SMPS MOSFET

Key Features

  • 25 Ω, IAS = 76A. TJ ≤ 175°C.
  • ISD ≤ 76A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, † Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 94971 SMPS MOSFET IRF3703PbF HEXFET® Power MOSFET Applications l Synchronous Rectification l Active ORing l VDSS 30V RDS(on) max 2.8mΩ ID 210A† Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Junction and Storage Temperature Range Max. 210 † 100 † 1000 230 3.8 1.5 ± 20 5.