The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc N-Channel MOSFET Transistor
·DESCRIPTION ·Drain Current :ID= 59A@ TC=25℃ ·Drain Source Voltage
: VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·High Frequency Synchronous Buck Converters for Computer Processor Power.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
30
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous
59
A
ID(puls)
Pulse Drain Current
230
A
Ptot
Total Dissipation
57
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature Range
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 2.6 ℃/W
IRF3707ZS
.
isc website:www.