IRF3707Z Datasheet | International Rectifier

Applications l High Frequency Synchronous Buck Converters for puter Processor Power HEXFET® Power MOSFET IRF3707Z IRF3707ZS IRF3707ZL Qg 9.7n C - 95812A VDSS RDS(on) max 30V 9.5m: Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB IRF3707Z D2Pak IRF3707ZS TO-262 IRF3707ZL Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS Pulsed Drain Current Continuous Drain Current, VGS @ 10V Max. Units ™ g @ 10V g i 42i 59 230 57 28 ± 20 Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw W W/°C °C 0.38 -55 to + 175 300 (1.6mm from case) 10 lbf in (1.1 N m) x x Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient Typ. Max. - - - 62 40 Units °C/W eà e - - - 0.50 - - -...