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IRF3707ZCLPbF - Power MOSFET

Download the IRF3707ZCLPbF datasheet PDF. This datasheet also covers the IRF3707ZCSPbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinea.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF3707ZCSPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current PD - 95464A IRF3707ZCSPbF IRF3707ZCLPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg :30V 9.5m 9.