IRF3707ZLPbF Description
2.653 62 40 Units V A W W/°C °C Units °C/W 1 05/08/08 IRF3707Z/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. 40 23 5.7 Units mJ A mJ Diode Characteristics.
IRF3707ZLPbF Key Features
- High Frequency Synchronous Buck Converters for puter Processor Power
- Lead-Free PD - 95333A IRF3707ZPbF IRF3707ZSPbF IRF3707ZLPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg :30
- Low RDS(on) at 4.5V VGS
- Ultra-Low Gate Impedance