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IRF3707ZCSPbF - Power MOSFET

Key Features

  • indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinea.

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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current PD - 95464A IRF3707ZCSPbF IRF3707ZCLPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg :30V 9.5m 9.