IRF3709ZCS Overview
·Static drain-source on-resistance: RDS(on) ≤6.3mΩ@VGS= 10V ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS.
| Part number | IRF3709ZCS |
|---|---|
| Datasheet | IRF3709ZCS Datasheet PDF (Download) |
| File Size | 266.34 KB |
| Manufacturer | Inchange Semiconductor |
| Description | N-Channel MOSFET |
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·Static drain-source on-resistance: RDS(on) ≤6.3mΩ@VGS= 10V ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRF3709ZCS | N-Channel MOSFET | VBsemi |
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IRF3709ZCS | HEXFET Power MOSFET | International Rectifier |
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IRF3709ZCSPBF | HEXFET Power MOSFET | International Rectifier |