Datasheet Summary
isc N-Channel MOSFET Transistor
- DESCRIPTION
- Static drain-source on-resistance:
RDS(on) ≤6.3mΩ@VGS= 10V
- Drain Source Voltage
: VDSS= 30V(Min)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
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- High Frequency Synchronous Buck Converters for puter Processor...
