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PD - 93918
SMPS MOSFET
IRF3703
HEXFET® Power MOSFET
Applications l Synchronous Rectification l Active ORing Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
VDSS
30V
RDS(on) max
2.8mΩ
ID
210A
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max. 210 100
1000 230 3.8 1.5 ± 20 5.
IRF3703 Datasheet
