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IRF3704ZS - HEXFET Power MOSFET

This page provides the datasheet information for the IRF3704ZS, a member of the IRF3704Z HEXFET Power MOSFET family.

Datasheet Summary

Features

  • loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the dra.

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www.DataSheet4U.com PD - 94756 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET® Power MOSFET IRF3704Z IRF3704ZS IRF3704ZL Qg 8.7nC VDSS RDS(on) max 20V 7.9m: Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB IRF3704Z D2Pak IRF3704ZS TO-262 IRF3704ZL Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 20 ± 20 67 47 260 57 28 0.38 -55 to + 175 300 (1.6mm from case) 10 lbf in (1.
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