International Rectifier IRF3711S
Power MOSFET
| Part No. | IRF3711S |
|---|---|
| Datasheet | IRF3711S Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity HEXFET® Power MOSFET VDSS 20V RDS(on) max ID 6.0mΩ 110A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current TO-220AB IRF3711ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range D2Pak IRF3711S Max. 20 ± 20 110 69 440 120 3.1 0.96 -55 to + 150 TO-262 IRF3711L Units V V A W W W/°C °C Thermal Resistance RθJC RθCS RθJA RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount) Typ. ––– 0.50 ––– ––– Max.
