International Rectifier IRF5210SPBF
Power MOSFET
| Part No. | IRF5210SPBF |
|---|---|
| Datasheet | IRF5210SPBF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET D VDSS = -100V RDS(on) = 60mΩ G S ID = -38A D D S D G D2Pak IRF5210SPbF S D G TO-262 IRF5210LPbF G Gate D Drain S SourceABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V c Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation VGS EAS IAR EAR dv/dt Linear Derating Factor Gate-to-Source Voltage d Single Pulse Avalanche Energy c Avalanche Current c Repetitive Avalanche Energy e Peak Diode Recovery dv/dt TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Para...
