International Rectifier IRF5801
Power MOSFET
| Part No. | IRF5801 |
|---|---|
| Datasheet | IRF5801 Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High frequency DC-DC converters IRF5801 HEXFET® Power MOSFET VDSS 200V RDS(on) max 2.2Ω ID 0.6A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l D 1 6 A D D 2 5 D G 3 4 S T op V iew TSOP-6ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 0.6 0.48 4.8 2.0 0.016 ± 30 9.6 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJA Parameter Junction-to-Ambient Typ. ––– Max. 62.5 Units °C/W Notes through are on page 8 1 01/17/01 IRF5801 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
