International Rectifier IRF5801PbF
Power MOSFET
| Part No. | IRF5801PbF |
|---|---|
| Datasheet | IRF5801PbF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Lead-Free l Halogen-Free l IRF5801PbF HEXFET® Power MOSFET VDSS 200V RDS(on) max 2.2W ID 0.6A 9 9 B ! " % $ # 9 9 T TSOP-6ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 0.6 0.48 4.8 2.0 0.016 ± 30 9.6 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJA Parameter Junction-to-Ambient Typ. ––– Max. 62.5 Units °C/W Notes through are on page 8 1 04/20/10 IRF5801PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
