International Rectifier IRF6218PBF
HEXFET Power MOSFET
APPLICATIONS
Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free l IRF6218PbF HEXFET® Power MOSFET -150V 150m:@VGS = -10V VDSS RDS(on) max ID -27A Benefits l l D l Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current G S TO-220ABABSOLUTE MAXIMUM RATINGS
Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. -150 ± 20 -27 -19 -110 250 1.6 8.2 -55 to + 175 Units V A c Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and W W/°C V/ns °C h Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.6mm from case ) 10 lbf●in (1.1N●m) Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case g Typ.