International Rectifier IRF6218S
Power MOSFET
APPLICATIONS
l Reset Switch for Active Clamp Reset DC-DC converters SMPS MOSFET PD - 95863 IRF6218S IRF6218L HEXFET® Power MOSFET VDSS RDS(on) max ID : -150V 150m @VGS = -10V -27A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See G App. Note AN1001) l Fully Characterized Avalanche Voltage and Current D D2Pak TO-262 S IRF6218S IRF6218LABSOLUTE MAXIMUM RATINGS
Parameter VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM c Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation dv/dt TJ TSTG Linear Derating Factor h Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC g Junction-to-Case RθJA gh Junction-to-Ambient (PCB Mounted, steady state) Max. -150 ± 20 -27 -19 -110 250 1.6 8.2 -55 to + 175 300 (1.6mm from case ) Typ. ––– ––– Max.